A method of fabricating a nonvolatile memory using quantum dots is disclosed. An example method sequentially forms a first insulation layer and a second insulation layer on a substrate where a predetermined device is formed. The example method also forms a hard mask by etching the second insulation layer, deposits silicon on the substrate where the hard mask is formed, forms quantum dots by etching the silicon through an etchback process, removes the hard mask, forms a third insulation layer on the substrate where the quantum dots are formed, and deposits a conductive layer on the third insulation and patterning it to form a gate.