A method for forming a semiconductor device. A substrate, having a
plurality of deep trench capacitors therein, is provided wherein upper
portions of the deep trench capacitor devices are revealed. Spacers on
sidewalls of the upper portions of the deep trench capacitors are formed
to form a predetermined region surrounded by the deep trench capacitor
devices. The predetermined region of the substrate is etched using the
spacers and the upper portions of the deep trench capacitors serve as a
mask to form a recess, and a recessed gate is formed in the recess.