To obtain a semiconductor device and a method of manufacturing the same which can reduce influence of fluctuation in characteristic among transistors due to fluctuation in laser light irradiation number and laser light intensity on a semiconductor. There is provided a semiconductor device with plural pixels having transistors forming a matrix pattern, in which: the transistors have semiconductors crystallized by laser light irradiation; the semiconductors stretch over at least two pixels; the length of each of the semiconductors is longer than the pixel pitch of the pixels; and when the scan pitch of the laser light is given as M and the pixel pitch of the pixels is given as N, the semiconductors are irradiated with the laser light N/M times or more.