A 3-dimensional PCM structure and method for using the same for carrying out 3-dimensional integrated circuit wiring electrical testing and failure analysis in an integrated circuit manufacturing process, the method including forming a first metallization layer; carrying out a first wafer acceptance testing (WAT) process to test the electrical continuity of the first metallization layer; forming first metal vias on the first metallization layer conductive portions and a second metallization layer comprising metal islands on the first metal vias wherein the metal islands electrically communicate with the first metallization layer to form a process control monitor (PCM) structure; and, carrying out a second WAT process to test the electrical continuity of the first metallization layer.