A test structure of a semiconductor device is provided. The test structure
includes a semiconductor substrate, a transistor which includes a gate
electrode formed on first and second active regions defined within the
semiconductor substrate, and first and second junction regions which are
arranged at both sidewalls of the gate electrode to reside within the
first and second active regions and are silicided, and first and second
pads through which electrical signals are applied to the silicided first
and second junction regions and detected and which are formed on the same
level as the gate electrode or the semiconductor substrate.