There is disclosed a photovoltaic conversion device constructed using a p-type crystalline silicon substrate 404 doped with boron, which comprises a bulk substrate region 404, regions other than the bulk substrate region including an n-type region 403a joining to a light receiving surface of the bulk surface region, a BSF region 405 joining to a back surface of the bulk surface region, wherein with regions other than the bulk substrate region 404 being removed, when a minority carrier diffusion length of the bulk substrate region 404 is measured from the light receiving surface of the bulk surface region, 0.5<(L1/Lpeak)is satisfied, where L1 is a minority carrier diffusion length at an arbitrary measuring area of the light receiving surface of the bulk surface region, and Lpeak is a diffusion length corresponding to a maximum peak on the side of higher diffusion length of a histogram, the histogram being formed from data obtained when a minority carrier diffusion length of the light receiving surface of the bulk surface region is measured at a plurality of measurement areas. This structure can reduce influence of impurities such as Fe, and enhances utilization efficiency of silicon ingots. With this structure, a photovoltaic conversion device with high photovoltaic conversion efficiency can be realized.

 
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