A trial semiconductor photomask design having discontinuity points is provided, and each of the discontinuity points is treated as simulated light sources. Simulated light from each of the simulated light sources is focused, and a composite image intensity of the focused simulated light is calculated to verify the trial semiconductor photomask design. The trial semiconductor photomask design is sharpened. A photomask design specification is generated for use in fabricating such a photomask.

 
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