There is disclosed a nanotube sensor which essentially employs a straight or twisted nanotube deposited on a supporting surface, such as silicon, silicon dioxide and some other semiconductor or metal material. The nanotube is basically a graphite device which is now subjected to stress causing the electrical characteristics of the nanotube to change according to stress. The nanotube is then provided in a circuit, such as a Wheatstone Bridge or other circuit, and the circuit will produce an output signal proportional to the change in electrical characteristics of the nanotube according to the applied force.

 
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< Modification of selectivity for sensing for nanostructure sensing device arrays

> Forming self-aligned nano-electrodes

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