An exemplary embodiment includes a semiconductor device. The semiconductor device can include a channel including one or more compounds of the formula A.sub.xB.sub.xO.sub.x, wherein each A is selected from the group of Cu, Ag, Sb, each B is selected from the group of Cu, Ag, Sb, Zn, Cd, Ga, In, Ge, Sn, and Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A and B are different.

 
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> Bottom conductor for integrated MRAM

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