There is provided a multi-port memory device, which is capable of preventing a first high data fail phenomenon at an initial operation in a current sensing type global data bus transmission/reception structure without causing a problem in a low data transmission. In the multi-port memory device having a data transmission/reception block (bank, port, global data bus connection block, etc.) which exchanges data with the global data bus in a current sensing type data transmission/reception structure, an initialization switch is used to discharge each global data bus line and an initialization signal generator controls the initialization switch. A first high data fail at the initial operation is caused by a high precharge level of the global data bus. According to the present invention, it is possible to lower a high precharge level without causing a problem in data transmission.

 
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> Method and system for dynamically adjusting DRAM refresh rate

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