A wafer dicing process for optical electronic packing is provided. The process includes: providing a first wafer (glass wafer) and a second wafer (interposer wafer); etching the second wafer to form a reference flat coordinate; laminating the first wafer on the second wafer; providing a third wafer (CMOS wafer); laminating the third wafer under the second wafer; cutting the first wafer by a first dicing saw according to the reference flat coordinate; and cutting the third wafer by a second dicing saw to form a first reference axis and a second reference axis perpendicular to each other and to establish a backside dicing reference coordinate. The process not only can reduce wearing loss of the dicing saws but also ensure to form high quality cutting edges and a precise backside dicing reference coordinate.

 
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> Wafer back surface treating method and dicing sheet adhering apparatus

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