A semiconductor device includes a memory cell and driver. The memory cell
has a cell transistor which has one end of a current path connected to a
bit line and stores data by storing charges in a floating gate, and a
selector gate transistor which has one end of a current path connected to
the other end of the current path of the cell transistor and the other
end of the current path connected to a source line. The driver is
configured to apply, to the control gate of the cell transistor in read,
a potential of the same sign as that of a potential applied to the gate
of the selector gate transistor.