A semiconductor device has an n.sup.--semiconductor layer and p.sup.+-diffusion regions each having a depth of 14 to 20 .mu.m (design value) selectively formed in the n.sup.- semiconductor layer. With the entire surface of the chip irradiated with light ions, such as He ions, a lifetime killer is introduced from a position d2 shallower than a position d1 of a p-n junction surface, formed from the n.sup.--semiconductor layer and the p.sup.+-diffusion regions, to a position d3 deeper than the position d1 to form a short-lifetime region over the entire chip. The irradiation is carried out so that the light ion irradiation half width is not more than the depth of the p.sup.+-diffusion regions and a position of a peak of the light ions becomes deeper than the light ion irradiation half width and within the range between 80% and 120% of the depth of the p.sup.+-diffusion regions. Thus, in a semiconductor device such as a converter diode, a capability for a high decay rate of a reverse recovery current di/dt can be brought sufficiently high to such an extent that the device can withstand a lightening surge with a low forward voltage VF being kept low.

 
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> Methods of manufacture of a via structure comprising a plurality of conductive elements and methods of forming multichip modules including such via structures

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