A bandgap reference circuit is proposed. To remove parasitic effects, this includes the combination of a first circuit section (1), which generates a temperature-proportional voltage, and a second circuit section (2), which generates an inversely temperature-proportional voltage. The bandgap reference circuit generates a bandgap reference voltage (U.sub.bg) as the sum of the temperature-proportional voltage of the first circuit section (1) and the inversely temperature-proportional voltage of the second circuit section (2). To remove the parasitic effects, both circuit sections (1, 2) include bipolar transistor circuits with multiple bipolar transistors (Q.sub.1-Q.sub.4; Q.sub.5-Q.sub.8), so that both the temperature-proportional voltage and the inversely temperature-proportional voltage are generated in the form of a sum and difference formation of multiple base-emitter voltages of the appropriate bipolar transistors.