There is provided a liquid metal ion beam irradiation device for irradiating a specific portion of a sample 6 with a prescribed liquid metal ion beam so as to form a cross section, and a gaseous ion beam irradiation device 7 for scanning a prescribed region (observation region) of the cross section using a gaseous ion beam focused to a prescribed diameter and removing a damaged layer on the prescribed region.

 
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> NROM flash memory devices on ultrathin silicon

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