A method is provided for forming a metal/semiconductor/metal (MSM) current
limiter and resistance memory cell with an MSM current limiter. The
method includes the steps of: providing a substrate; forming an MSM
bottom electrode overlying the substrate; forming a ZnOx semiconductor
layer overlying the MSM bottom electrode, where x is in the range between
about 1 and about 2, inclusive; and, forming an MSM top electrode
overlying the semiconductor layer, The ZnOx semiconductor can be formed
through a number of different processes such as spin-coating, direct
current (DC) sputtering, radio frequency (RF) sputtering, metalorganic
chemical vapor deposition (MOCVD), or atomic layer deposition (ALD).