Computational models of a patterning process are described. Any one of
these computational models can be implemented as computer-readable
program code embodied in computer-readable media. The embodiments
described herein explain techniques that can be used to adjust parameters
of these models according to measurements, as well as how predictions
made from these models can be used to correct lithography data. Corrected
lithography data can be used to manufacture a device, such as an
integrated circuit.