A system that facilitates optical proximity correction comprises a layout that is desirably transferred to a silicon wafer, and an optical proximity correction component that alters the layout based at least in part upon a distinction between one-dimensional patterns and two-dimensional patterns within the layout. The system can comprise a block generator that replaces two-dimensional patterns within the layout with blocks. A model-based optical proximity correction component thereafter performs model-based optical proximity correction upon one-dimensional patterns within the layout.