An inspection method including measuring a height of a load cell of a load detecting mechanism using a laser length measuring mechanism, obtaining a first rise amount of the load detecting mechanism from a measuring position of the load detecting mechanism up to a contact starting position, measuring a height of an electrode of a wafer using the laser length measuring mechanism, and obtaining a second rise amount of a main chuck up to the contact starting point of the electrode with the probe based on a difference between a measuring height of the electrode of the wafer and the measuring height of the load detecting mechanism.