In a solid-state image pickup device including a light receiving sensor portion in a surface layer portion of a substrate, an in-layer lens disposed above the light receiving sensor portion, a color filter disposed on the in-layer lens, and an interlayer film disposed below the in-layer lens, an antireflection film is formed between the in-layer lens and the color filter, the antireflection film being formed of material having a refractive index which is an intermediate value between the refractive index of the in-layer lens and the refractive index of the color filter. Further, another antireflection film is formed between the in-layer lens and the interlayer film, the other antireflection film being formed of material having a refractive index which is an intermediate value between the refractive index of the in-layer lens and the refractive index of the interlayer film.

 
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> Vertical-cavity surface-emission type laser diode and fabrication process thereof

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