A single-poly non-volatile memory device invented to integrate into logic
process is disclosed. This non-volatile memory device includes a memory
cell unit comprising a PMOS access transistor that is serially connected
to a PMOS storage transistor formed in a cell array area, and, in a
peripheral circuit area, a high-voltage MOS transistor having a
high-voltage gate insulation layer is provided. The PMOS access
transistor has an access gate oxide layer that has a thickness equal to
the thickness of the high-voltage gate insulation layer in a peripheral
circuit area.