A semiconductor device comprises a first metal layer, which comprises a buried metal layer connected to a diffusion layer within a substrate or to a lower-layer wiring. A first metal wiring layer, a second metal layer having a buried metal layer, and a second metal wiring layer are sequentially connected. Within a groove passing through insulating layers sandwiching the metal wiring layer from above and below the same as well as on one of the insulating layers there is formed a capacitive element C.

 
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> Molded semiconductor device with heat conducting members

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