A new read scheme is provided for an MRAM bit having a pinned layer
(fixed) and a storage layer (free) sandwiching a nonmagnetic spacer
layer. By applying a magnetic field to the bit at least partially
orthogonal to the easy axis of the bit, the magnetization direction of
the storage layer can be partially rotated or canted without switching
the logical state of the MRAM bit. The resistivity of the bit is measured
(calculated based on a voltage/current relationship) in two ways: (i)
with the magnetization direction of the storage layer partially rotated
in a first direction and (ii) with the magnetization direction of the
storage layer in its bi-stable orientation parallel to the easy axis.
Those measures can then be used to compare and determine the logical
state of the storage layer. For instance, if the canted resistivity is
greater than the uncanted resistivity then the magnetization directions
of the pinned and storage layer are parallel, and if the canted
resistivity is less than the uncanted resistivity then the magnetization
directions of the pinned and storage layer are opposite.