The present invention provides, in one embodiment, a semiconductor wafer (100) dicing process. The dicing process comprises removing circuit features (120) from a street (115) located between dies (105) on a semiconductor substrate (102) using a first blade (135), such that the semiconductor substrate is exposed, and cutting through the exposed semiconductor substrate using a second blade (190). The first blade has a surface (140) coated with an abrasive material (145) comprising grit particles (150), having a median diameter (155) of at least about 25 microns. The grit particles are adhered to the first blade with a bonding agent (160) having a hardness of about 80 or less (Rockwell B Hardness scale). The grit particles have a concentration in the bonding agent ranging from about 25 to about 50 vol %. Another embodiment of the invention is a method of manufacturing a semiconductor device (200).