A photosensitive region includes a semiconductor substrate 40 made of a P-type semiconductor, and N-type semiconductor regions 41, 42 and 43 formed on the surface of the semiconductor substrate 40. Accordingly, the first photosensitive portion includes a portion of the semiconductor substrate 40 and the semiconductor regions 41, thus configuring a photodiode. The photosensitive region on one side contained in the second photosensitive region includes a portion of the semiconductor substrate 40 and the semiconductor regions 42, thus configuring a photodiode. The photosensitive region on the other side contained in the second photosensitive region includes a portion of the semiconductor substrate 40 and the semiconductor regions 43, thus configuring a photodiode. Each of the semiconductor regions 42 and 43 is in a shape of an approximate triangle, and is formed so that one side of the regions 42 is adjacent to one side of the region 43, and vice versa, in one pixel.