To provide a surface-emitting type semiconductor laser that has good luminescence property and can be driven at high speeds, and its manufacturing method. In a surface-emitting type semiconductor laser having a first mirror, an active layer and a second mirror formed above a substrate, the surface-emitting type semiconductor laser in accordance with the present invention includes a columnar section including at least a portion of the second mirror, a first electrode formed above the first mirror or below the substrate, a second electrode formed above the second mirror, a dielectric layer formed around at least a portion of the columnar section and in contact with the columnar section, and a heat radiating section formed around at least a portion of the columnar section through the dielectric layer, wherein the heat radiating section is in an electrically floating state.