Floating plate memory includes a diode as an access device, wherein the diode has four terminals, the first terminal serves as a word line, the second terminal serves as a storage node, the third terminal is floating, and the fourth terminal serves as a bit line; a floating plate capacitor serves as a storage device, wherein the capacitor includes three plates, the first plate is connected to the storage node, the second plate is floating and the third plate is connected to a plate line; when write, the diode determines whether the storage node is coupled or not by raising the plate line; when read, the diode serves as a sense amplifier to detect the storage node voltage whether it is forward bias or not, and the diode sends binary results to a data latch including a current mirror; and the memory is formed on the bulk and SOI wafer.