A method of fabricating a semiconductor device. The method comprises
creating a via in a dielectric layer that is formed on a substrate,
filling the via, and optionally, the surface of the dielectric layer with
a sacrificial material, patterning a first photoresist layer on the
sacrificial material to define a trench for the semiconductor device,
removing the first photoresist layer without affecting the sacrificial
material, repatterning a second photoresist layer on the sacrificial
material to define the trench for the semiconductor device, forming the
trench, and removing the second photoresist layer and the sacrificial
material completely after the trench is formed.