A method of manufacturing a floating gate is provided. The method includes the steps of forming a tunneling layer on a substrate, and forming a film layer containing a semiconductor component on the tunneling layer. The film layer consists of a semiconductor film or nano-dots.

 
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> Resistor material with metal component for use in circuitized substrates, circuitized substrate utilizing same, method of making said ciruitized substrate, and information handling system utilizing said ciruitized substrate

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