A multi-time programmable semiconductor memory device includes a unit array, a unit decoder and a cell distribution circuit. The unit array includes a plurality of programmable units, each of which has a plurality of one-time programmable cells. The unit decoder generates a unit select signal for selecting a programmable unit of the unit array based on an address signal. The cell distribution circuit generates an odd-numbered cell programming signal for programming one of odd-numbered one-time programmable cells of the plurality of the one-time programming cells of the programmable unit that is selected by the unit select signal, and an even-numbered cell programming signal for programming one of even-numbered one-time programmable cells of the plurality of the one-time programming cells, based on previous data state of the selected programmable unit received from the unit array, and present data state to be programmed to the selected programmable unit.