A nonvolatile memory device and programming method and apparatus therefore
are described that include operatively coupled first and second sense
amplifiers having first and second data registers or latches, a storage
circuit for storing a data of the second amplifier, a pass/fail check
circuit for checking the content of the second data register whether a
cell of the memory device has been sufficiently programmed and a restore
circuit for resetting the second data register for reprogramming the
device until sufficiently programmed.