A method of forming a plasma enhanced deposited oxide film on a substrate includes introducing into a chamber containing the substrate silane gas and a dopant gas such as phosphine. The chamber is pressurized and energy is applied to create a plasma. The energy may be a dual frequency energy. The gas rates and pressure are selected to produce a plasma enhanced deposited oxide film on a substrate having a Si--O--Si bond peak absorbance in the IR spectrum of at least 1092 cm.sup.-1.

 
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> Dynamic rapid vapor deposition process for conformal silica laminates

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