A method for marking a semiconductor wafer 302 includes the steps of: providing a reticle 300 including liquid crystal pixels; positioning the semiconductor wafer in proximity to the reticle; directing radiation through a first plurality of the pixels onto a first location on the wafer; changing the relative positions of the semiconductor wafer and the reticle; and directing radiation through a second plurality of the pixels onto a second location on the wafer. The first plurality of pixels can be used to form a first mark and the second plurality of pixels can be used to form a second mark, wherein the second mark is different from the first mark. The marks can be made of a pattern of dots in order to save space. The pixels can be selected to form certain marks by using a computer 304 to turn on or off a transistor that may be associated with each pixel. Also described is a system for marking a semiconductor wafer. The system includes a wafer mount 301; a radiation source 306 in proximity to the wafer mount; a reticle 300 which includes liquid crystal pixels and that is positionable between the radiation source and the wafer mount; and a mechanism 303 for changing the relative positions of the reticle and the wafer mount. The radiation source can be non-coherent far-ultraviolet, near-ultraviolet, or visible sources, or a laser.