A phase-change memory cell may be formed by selectively depositing the lower electrode in the phase-change memory pore. Thereafter, an adhesion-promoting material may be selectively deposited on the selectively deposited lower electrode and the upper surface surrounding the pore. Through the use of selective deposition techniques, the adhesion-promoting material can be positioned where needed and the lower electrode may be defined in a fashion that may reduce shunting current, reduce device current requirements, and increase dynamic range in some embodiments.