A ferroelectric memory has a plurality of memory cells respectively having a cell transistor and ferroelectric capacitor whose one terminal is connected with the cell transistor, a plurality of word lines respectively connected with said cell transistor, a plurality of plate lines connected with the other terminal of said ferroelectric capacitor and intersecting with said word lines, a plurality of local bit lines connected with said cell transistors, and a global bit line that is selectively connected with local bit lines. Furthermore, the ferroelectric memory has a sensing amplifier unit that detects the amount of charging of the local bit lines from said memory cells while maintaining the potential of the local bit lines at a potential equivalent to the non-selected plate lines, during reading.