A low-k dielectric layer having a composition of silicon, oxygen and carbon is removed from a wafer. The low-k dielectric layer is removed by exposing a surface of the low-k dielectric layer to an oxygen-containing gas to oxidized the surface. The oxidized surface is immersed in an etching solution having HF and H.sub.2SO.sub.4 to etch the low-k dielectric layer. The etched surface is exposed to at least one of (i) an etching solution having H.sub.2SO.sub.4 and H.sub.2O.sub.2, and (ii) an RF or microwave energized oxygen-containing gas, to remove the low-k dielectric layer from the wafer.