The present invention provides a magnetic memory device capable of performing reading operation with lower power consumption and at high read precision and a method of reading the magnetic memory device. Sense bit lines (21A, 21B) are provided in a bit line direction for each pair of magnetoresistive devices (12A, 12B) constructing a storage cell (12) and a read current is supplied. The read currents passed through the pair of magnetoresistive devices (12A, 12B) flow to the ground via a sense word line (31). Further, by providing a constant current circuit (108B) commonly for plural sense word lines (31), the sum of a pair of read currents passing through the pair of magnetoresistive devices (12A, 12B) in one storage cell constant, and information is read from the storage cell (12) on the basis of the difference between the pair of read currents. By sharing the constant current circuit (108B), variations in the sum of the pair of read currents can be reduced, and power consumption can be also reduced.