An edge-sealed, encapsulated environmentally sensitive device. The device includes at least one initial barrier stack, an environmentally sensitive device, and at least one additional barrier stack. The barrier stacks include at least one decoupling layer and at least one barrier layer. The environmentally sensitive device is sealed between the at least one initial barrier stack and the at least one additional barrier stack. A method of making the edge-sealed, encapsulated environmentally sensitive device is also disclosed.

 
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> Method of manufacturing a semiconductor device comprising doping steps using gate electrodes and resists as masks

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