A method used to form a semiconductor device comprises processing a semiconductor wafer to include one or more vias or through-holes only partially etched into the wafer, and scribe marks only partially etched into the wafer which define a plurality of semiconductor devices. Wafer material is removed from the back of the wafer to the level of the vias and scribe marks to form a via opening through the wafer while simultaneously dicing the wafer into individual semiconductor dice.

 
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> Growing [110] silicon on [001]-oriented substrate with rare-earth oxide buffer film

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