Numerous embodiments of a method and apparatus for a capping layer are disclosed. In one embodiment, a method of forming a capping layer for a semiconductor device comprises forming one or more layers on at least a portion of the top surface of a semiconductor device, substantially planarizing at least one of the one or more layers, annealing at least a portion of the semiconductor device, and removing a substantial portion of the one or more layers, using one or more etching processes.