The electronic device (100) is a chip-on-chip construction on a lead frame (10) comprising a heat sink (13) in an encapsulation (80). The first chip (20) and the second chip (30) are mutually connected by first conductive interconnections (24) and the first chip (20) is connected to the lead frame (10) by second conductive interconnections (27) which preferably have a lower reflow temperature than the first conductive interconnections (24). By heating the device (100) the adhesive layer (25) will first shrink, causing a stress, which will be relaxated by reflowing the second conductive interconnections (27).

 
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> Integrated circuit having at least one metallization level

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