Provided is a temperature-compensated bias circuit for a power amplifier, in which a first resistor (Rref) connected to a reference voltage is connected to a base terminal of a third transistor (Q3) and an emitter terminal of the third transistor is connected to a first diode (D1). The temperature-compensated bias circuit includes a second resistor (R1) connected to the reference voltage, a third resistor (R2) connected to the second resistor in series, a fourth resistor (Rc) having one terminal connected to the reference voltage, a fifth resistor (Re) having one terminal connected to ground, a bias transistor (Q4) having a base terminal connected to a contact point (VS) between the second resistor and the third resistor, a collector terminal connected to the other terminal of the fourth resistor, and an emitter terminal connected to the other terminal of the fifth resistor, and a sixth resistor (Rf) connected between a collector terminal of the third transistor and a collector terminal of the bias transistor.