A method and system for providing a magnetic memory is described. The
method and system include providing a plurality of magnetic storage
cells, providing a bit line, providing a plurality of word lines,
providing bit line read/write logic, and providing a plurality of
switches for the bit line. Each of the magnetic storage cells includes a
magnetic storage element capable of being programmed by a write current
driven through the magnetic storage element. The bit line corresponds to
the magnetic storage cells. Each of the word lines corresponds to a
magnetic storage cell of the magnetic storage cells and allows current to
flow through the magnetic storage cell. The bit line read/write logic
corresponds to the bit line. The switches are for the bit line and
controlled by the bit line read/write logic to selectively provide a read
current or the write current to the magnetic storage elements.