Methods of fabricating nanoclusters, e.g., germanium nanoclusters, and/or a dielectric layer having the same are provided. The method may include forming a first silicon oxide layer on a silicon substrate; forming a germanium (GeO) layer on the silicon oxide layer; altering the germanium oxide (GeO) layer into a germanium dioxide (GeO.sub.2) layer and/or a first group of germanium (Ge) nanoclusters; and/or altering germanium dioxide (GeO.sub.2) into silicon dioxide (SiO.sub.2) such that a second group of germanium (Ge) nanoclusters may be formed. The nanoclusters, e.g., germanium nanoclusters, may have more homogeneous sizes and/or may be more evenly arranged the dielectric layer such that the nanoclusters, e.g., germanium nanoclusters, may be easily used in a semiconductor device.