A method of forming a liquid crystal display device includes forming an
amorphous silicon layer over a substrate and forming a light reflecting
layer only over a first portion of the amorphous silicon layer. The
amorphous silicon layer is then irradiated with a laser to convert it to
a polysilicon layer. The light reflecting layer partially reflects the
light away from the first portion of the amorphous silicon layer such
that a first portion of the polysilicon layer has a first polysilicon
grain size and a second portion of the polysilicon layer has a second
polysilicon grain size, which is larger than the first polysilicon grain
size. A first plurality of thin film transistors having reduced leakage
current characteristics may then be formed from the first portion of the
polysilicon layer.