A semiconductor process system (10) includes a measuring section (40), an
information processing section (51), and a control section (52). The
measuring section (40) measures a characteristic of a test target film
formed on a target substrate (W) by a semiconductor process. The
information processing section (51) calculates a positional correction
amount of the target substrate (W) necessary for improving planar
uniformity of the characteristic, based on values of the characteristic
measured by the measuring section (40) at a plurality of positions on the
test target film. The control section (52) controls a drive section (30A,
32A) of a transfer device (30), based on the positional correction
amount, when the transfer device (30) transfers a next target substrate
(W) to the support member (17) to perform the semiconductor process.