A laser processing process which comprises laser annealing a silicon film
2 .mu.m or less in thickness by irradiating a laser beam 400 nm or less
in wavelength and being operated in pulsed mode with a pulse width of 50
nsec or more, and preferably, 100 nsec or more.A laser processing
apparatus which comprises a laser generation device and a stage for
mounting thereon a sample provided separately from said device, to
thereby prevent transfer of vibration attributed to the movement of the
stage to the laser generation device and the optical system. A stable
laser beam can be obtained to thereby improve productivity.