Provided is a semiconductor laser diode. The semiconductor laser diode
includes a first material layer, an active layer, and a second material
layer, characterized in that the semiconductor laser diode includes: a
ridge waveguide, which is formed in a ridge shape over the second
material layer to define a channel defined so that a top material layer
of the second material layer is limitedly exposed, and in which a second
electrode layer which is in contact with the top material layer of the
second material layer via the channel is formed; and a first protrusion,
which is positioned at one side of the ridge waveguide and has not less
height than that of the ridge waveguide.