A spin-on glass (SOG) composition and a method of forming a silicon oxide
layer utilizing the SOG composition are disclosed. The method includes
coating on a semiconductor substrate having a surface discontinuity, an
SOG composition containing perhydropolysilazane having a compound of the
formula --(SiH.sub.2NH).sub.n-- wherein n represents a positive integer,
a weight average molecular weight within the range of about 4,000 to
8,000, and a molecular weight dispersion within the range of about 3.0 to
4.0, to form a planar SOG layer. The SOG layer is converted to a silicon
oxide layer with a planar surface by curing the SOG layer. Also disclosed
is a semiconductor device made by the method.