A method of manufacturing a semiconductor device includes an origin part
forming process in order to form a plurality of origin parts, each of
which serves as an origin for crystallization of a semiconductor film on
a substrate, a semiconductor film forming process to form the
semiconductor film on the substrate where the origin parts have been
formed, and a thermal treatment process in which the semiconductor film
is thermally treated in order to form a plurality of nearly single
crystalline grains, each of which is almost centered at each of the
plurality of origin parts. The method further includes a patterning
process to carry out patterning the semiconductor film in order to form a
transistor region and an element forming process to form a gate
insulation film and a gate electrode on the transistor region so as to
form a thin film transistor, wherein the origin parts are formed in such
a manner that the nearly single crystalline grains are included in the
source region and drain region of the patterning process.